Ya-Hong Xie, Ph.D.

FENA Theme 1: Novel Materials from Atomic and Molecular Levels
FENA Task: Nano-patterning Using PI_PS Di-block Co-Polymer

Tel.: (310) 825-2971
Email: yhx@seas.ucla.edu
Website: http://www.seas.ucla.edu/smrl/

University: UC Los Angeles
Department Affiliation: Materials Science and Engineering

Research

• Self-assembled quantum dots of semiconductor materials via epitaxy
• High mobility two-dimensional electron systems in strained Si
• RF crosstalk isolation technology
• Nano-patterning with long range order using block copolymers
• Optical transceiver integrated with Si CMOS for chip-to-chip interconnects.

Biography

Ya-Hong Xie received his BS in physics from Purdue University in 1981, and MS and PhD in Electrical Engineering from UCLA in 1984 and 1986, respectively. He joined AT&T Bell Laboratories in 1986 as a member of the technical staff, a position he held until joining UCLA as a professor in 1999. His research activities while at Bell Labs included SiGe heteroepitaxy on Si, compositionally graded buffer layers of SiGe on Si, high mobility two-dimension electron and hole gases on in SiGe/Si heterostructures, Er doped Si, light emission from porous Si, vertical cavity surface emitting lasers, and RF BiCMOS technology development. His current research interests include RF crostalk isolation using semi-insulating porous Si, Si-based laser with InGaAs self-assembled quantum dots as the optical gain medium, and the fabrication of high mobility two-dimensional electron systems in strained Si. He has pioneered the development of relaxed SiGe buffer layer for strained Si electronics. He has published over 90 papers in various areas of semiconductor materials and devices, and holds 16 patents. He is a member of the American Physical Society, the Materials Research Society, and a senior member of IEEE.